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 MBRF20H150CTG, MBR20H150CTG SWITCHMODETM Power Rectifier 150 V, 20 A
http://onsemi.com Features and Benefits
* * * * * *
Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 20 A Total (10 A Per Diode Leg) Guard-Ring for Stress Protection These are Pb-Free Devices
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 150 VOLTS
1 2, 4 3
Applications
* Power Supply - Output Rectification * Power Management * Instrumentation
Mechanical Characteristics:
MARKING DIAGRAMS
* * * * *
Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO-220 & TO-220FP) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
TO-220 FULLPAK] CASE 221D STYLE 3 1 2 3 4
AYWW B20H150G AKA
MAXIMUM RATINGS
Please See the Table on the Following Page TO-220AB CASE 221A STYLE 6 1 2 AYWW B20H150G AKA
3 A Y WW B20H150 G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Device = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2007
1
October, 2007 - Rev. 0
Publication Order Number: MBRF20H150CT/D
MBRF20H150CTG, MBR20H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 134C (Per Leg) (Per Device) Symbol VRRM VRWM VR IF(AV) IFSM TJ Tstg dv/dt Machine Model = C Human Body Model = 3B Value 150 Unit V
10 20 180 -20 to +150 -65 to +150 10,000 > 400 > 8000
A A C C V/ms V
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) ESD Ratings:
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Rating Maximum Thermal Resistance (MBR20H150CT) (MBRF20H150CT) - Junction-to-Case - Junction-to-Ambient - Junction-to-Case Symbol RqJC RqJA RqJC Value 2.0 45 2.5 Unit C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25C) (IF = 5 A, TC = 125C) (IF = 10 A, TC = 25C) (IF = 10 A, TC = 125C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 125C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Symbol vF 0.72 0.57 0.87 0.65 iR 50 30 0.60 0.68 mA mA Typ Max Unit V
DEVICE ORDERING INFORMATION
Device Order Number MBRF20H150CTG MBR20H150CTG Package Type TO-220FP (Pb-Free) TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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2
MBRF20H150CTG, MBR20H150CTG
IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 125C 10 TJ = 100C TJ = 25C 100 TJ = 125C TJ = 100C TJ = 25C 10
1
1
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E-02 TJ = 125C IR, REVERSE CURRENT (A) 1.0E-03 TJ = 100C
1.0E-01 IR, REVERSE CURRENT (A) TJ = 125C
1.0E-02 TJ = 100C
1.0E-04
1.0E-03
1.0E-05 TJ = 25C
1.0E-04 TJ = 25C
1.0E-06
1.0E-05
1.0E-07 1.0E-06 0 10 20 30 40 50 60 70 80 90 100110 120130140150 0 10 20 30 40 50 60 70 80 90 100110 120130140150 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IF, AVERAGE FORWARD CURRENT (AMPS)
16 14 12 10 8 6 4 2 0 110
dc
PFO, AVERAGE POWER DISSIPATION (WATTS)
18
18 16 14 SQUARE 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 IO, AVERAGE FORWARD CURRENT (AMPS) dc TJ = 150C
SQUARE WAVE
115
120
125
130
135
140
145
150
155
TC, CASE TEMPERATURE (C)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRF20H150CTG, MBR20H150CTG
1000 TJ = 25C C, CAPACITANCE (pF)
100
10 0
50
100
150
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
100 D = 0.5 10
0.2 0.1 0.05 0.01 P(pk) t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000
1
0.1
0.01 0.000001
0.00001
0.0001
Figure 8. Thermal Response Junction-to-Ambient for MBR20H150CTG
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5 0.2 0.1 0.05
0.1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10
P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000
Figure 9. Thermal Response Junction-to-Case for MBR20H150CTG
http://onsemi.com
4
MBRF20H150CTG, MBR20H150CTG
0
R(t), TRANSIENT THERMAL RESISTANCE 10 D = 0.5 1 0.2 0.1 0.05 0.01 P(pk) 0.01 SINGLE PULSE 0.001 0.000001 t1 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000
0.1
Figure 10. Thermal Response Junction-to-Case for MBRF20H150CTG
http://onsemi.com
5
MBRF20H150CTG, MBR20H150CTG
PACKAGE DIMENSIONS
TO-220 FULLPAK CASE 221D-03 ISSUE J
-TF Q A
123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
DIM A B C D F G H J K L N Q R S U
0.25 (0.010)
B
M
Y
STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE
TO-220 CASE 221A-09 ISSUE AE
-TB
4 SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
Q
123
A U K
H Z L V G D N R J
FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC.
STYLE 6: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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6
MBRF20H150CT/D


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